•Graphene film.
•Growth method: CVD synthesis.
•Appearance: Transparent film.
•Transparency: >97%.
•Coverage: >95%.
•Number of graphene layers: 1.
•Thickness (theoretical): 0.345 nm.
•FET electron mobility on Al2O3: 2000 cm2/Vs.
•Hall electron mobility on SiO2/Si: 4000 cm2/Vs.
•Sheet resistance on SiO2/Si: 450+/-40 Omega/sq (1cm x1cm).
•Grain size: Up to 10 mum.
•Substrate: Copper Foil.
•Thickness: 18 mum.The product is pre-treated for easier bottom layer removal. The monolayer graphene on the back side of copper is partially removed but not completely so an additional treatment like RIE is needed before transfer to eliminate the bottom layer totally.
Synonyms: Graphene/Cu
Application:
•Flexible batteries.
•Electronics.
•Aerospace industry.
•MEMS and NEMS.
•Microactuators.
•Conductive coatings.