Synonyms: Tris(dimethylamino)silane; Tris(dimethylamido)silane; (Me2N)3SiH; N,N,N',N',N'', N''-Hexamethylsilanetriamine; (Me2N)3SiH; N,N,N',N',N'',N''-Hexamethylsilanetriamine; TDMAS; Tris(dimethylamido)silane
CAS Number: 15112-89-7
Formula: C6H19N3Si
Formula Weight: 161.32
Linear Formula: ((CH3)2N)3SiH
MDL No.: MFCD00048006
Boiling Point: 142 C(lit.)
Melting Point: -90 C (lit.)
Density: 0.838 g/mL at 25 C(lit.)
EC Number: 239-165-0
UNSPSC Code: 12352300
Application: Tris(dimethylamino)silane (TDMAS) is used as an organosilicon source for the deposition of Si oxynitride; carbonitride; nitride and oxide thin films. It is also used to form multicomponent silicon containing thin films. The depositions can be carried out at low substrate temperatures (<150 ). the melting point and vapor pressure of tdmas is in a suitable working range; thus making it a very good vapor deposition precursor.<>
RIDADR: UN3398 - DOT UN3399 class 4.3 - PG 2 - Organometallic substance, liquid, water-reactive, HI: all (not BR)
WGK Germany: 3
Flash Point(F): 17.6 - 32 F
Flash Point(C): -8 - 0 C
R Codes: 11-15-20-29-34-52/53
S Codes: 16-26-36/37/39-43-45
IOD Codes: F,C
Symbol: GHS02, GHS05, GHS06
Signal Word: Danger
Hazard Statements: H225-H261-H302-H311-H314-H330
Precautionary statements: P210-P231 + P232-P260-P280-P284-P422