•Graphene preparation method: electrochemical exfoliation.
•Graphene thickness by AFM: 80%, 1-3 layers.
•Sheet size by AFM: 10 mum.
•Oxygen content: 7.5% (by XPS) (C/O-ratio: 12.3).
•Raman I_D/I_G ratio: 0.4.
•Sheet resistance: 4.8 kOmega/sq.
•Typical properties of films produced thereof (after dry transfer from PTFE-filter): 15 nm film: 85% transmittance, sheet resistance of 16 kOmega/sq (as made), 4.1 kOmega/sq (after 30 min, 200 C),<1 komega q (conc. hno3-treatment).25 nm film: 73% transmittance, sheet resistance of 8 komega q (as made), 2.4 komega q (after 30 min, 200 c), <1 komega q (conc. hno3-treatment).<>
Synonyms: Conductive ink; Electrochemically exfoliated graphene ink; Graphene ink